作者keitawang (秘密)
看板Physics
標題[問題] 半導體元件物理
時間Fri Apr 8 23:51:06 2011
手上有幾個關於半導體物理方面的問題
想在這邊請教一下個位,請各位幫小弟解解答吧 感謝!
1.Please draw a typical capacitance vs. gate voltage (C-V)
curve of a p-type MOS capacitor: (a) low frequency,
(b) high frequency, (c) deep depletion.
2.Please draw threshold voltage vs. substrate
bias voltage curve of an nMOS device:
(a) Na = 3E15 cm^-3, (b) Na = 1E16 cm^-3.
3.Please draw circuit diagram and schematic
cross section of a CMOS inverter.
4.Please describe a brief 0.5 um technology
CMOS process flow.
5.Please give an estimation of p-well junction
depth, n+ junction depth, and gate oxide
thickness for 5V MOS device by 0.5 um technology.
--
※ 發信站: 批踢踢實業坊(ptt.cc)
◆ From: 111.185.64.88
1F：推 condensed:....這 04/09 00:10
2F：推 rpfeynman:嘖嘖...這是作業嗎? 04/09 00:13
3F：→ keitawang:不是作業 算是主管問的問題翻了一下書 不是這麼確定答案 04/09 00:20
4F：推 nightkid:主管的兒子的作業 04/09 00:28
5F：→ jimiras:這算哪門子的物理 04/09 12:40
6F：噓 gauss760220:要我們幫你寫作業就對了? 04/11 13:37
7F：噓 gauss760220:你可以把自己的想法貼出來讓我們幫你看看 不是只貼題 04/11 13:59