1.想請教為什麼長波長的光能穿透的較深入?? 2.將金屬電極埋入基板中，以減少串聯電阻。 最近讀的資料好像能回答　整理出來給有興趣的同志們參考看看 (第一題的) 以下為資料節錄 (同時感謝duffrose板友、rainstonein板友 推文提供意見) http://img204.imageshack.us/img204/9633/solarcelloperationprincfc5.jpg At long wavelengths, around 1-1.2μm, the absorption coefficient α of Si is small and the absorption depth (1/α) is typically greater than 100μm. To capture these long-wavelength photons, we therefore need a thick p-side and at the same time a long minority carrier diffusion length Le. (第二題的) the photogenerated electrons have to traverse a surface semiconductor region to reach the nearest finger electrode. All these electron paths in the n-layer surface region to finger electrodes introduce an effective series resistance Rs into the photovoltaic circuit. http://img225.imageshack.us/img225/2400/rsrpbm0.jpg 實際應用時, 為了使入射面積達到最大, 通常會把手指電極做的更細 但這樣卻會使串聯電阻增加 (感謝algebra板友推文提供的意見) 上述在資料中也有提到: If the electrodes are thin, then the resistance of the electrodes themselves will further increase Rs. (R 反比於A) 基於此, 所以將電極嵌埋於n-side, 以增加電子流接觸電極的面積 http://img204.imageshack.us/img204/3804/mosaicedni0.gif 因為轉換效率η= FF*Isc*Voc/Pin 圖中可看出, 雖然串聯電阻值的上昇對開路電壓及短路電流幾乎沒有影響， http://img73.imageshack.us/img73/9320/characteristicdeviationck9.jpg 卻使得fill factor 大幅下降, 進而降低電池轉換隙率. 以上, 有錯請指教. (￣□￣")a --

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