1.想请教为什麽长波长的光能穿透的较深入?? 2.将金属电极埋入基板中，以减少串联电阻。 最近读的资料好像能回答　整理出来给有兴趣的同志们参考看看 (第一题的) 以下为资料节录 (同时感谢duffrose板友、rainstonein板友 推文提供意见) http://img204.imageshack.us/img204/9633/solarcelloperationprincfc5.jpg At long wavelengths, around 1-1.2μm, the absorption coefficient α of Si is small and the absorption depth (1/α) is typically greater than 100μm. To capture these long-wavelength photons, we therefore need a thick p-side and at the same time a long minority carrier diffusion length Le. (第二题的) the photogenerated electrons have to traverse a surface semiconductor region to reach the nearest finger electrode. All these electron paths in the n-layer surface region to finger electrodes introduce an effective series resistance Rs into the photovoltaic circuit. http://img225.imageshack.us/img225/2400/rsrpbm0.jpg 实际应用时, 为了使入射面积达到最大, 通常会把手指电极做的更细 但这样却会使串联电阻增加 (感谢algebra板友推文提供的意见) 上述在资料中也有提到: If the electrodes are thin, then the resistance of the electrodes themselves will further increase Rs. (R 反比於A) 基於此, 所以将电极嵌埋於n-side, 以增加电子流接触电极的面积 http://img204.imageshack.us/img204/3804/mosaicedni0.gif 因为转换效率η= FF*Isc*Voc/Pin 图中可看出, 虽然串联电阻值的上昇对开路电压及短路电流几乎没有影响， http://img73.imageshack.us/img73/9320/characteristicdeviationck9.jpg 却使得fill factor 大幅下降, 进而降低电池转换隙率. 以上, 有错请指教. (￣□￣")a --

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