作者sovereignty (沒人能把誰的幸福)
看板Electronics
標題Re: [問題] 有關MMIC
時間Mon Apr 10 06:31:41 2006
※ 引述《elf326 (小小)》之銘言：
: 一般MMIC都是使用GaAS作基板材料,有人知道在Si材料(CMOS)上作MMIC有什麼不同嗎
: 因為我看過有人在CMOS上用Metal layer做微帶線來實現電感,好像使用CMOS來作MMIC
: 可以操作在更高頻段(與一般的CMOS相比的畫),感覺除了它使用微帶線以外並沒有與其
: 他的CMOS電路(ex.PA,LNA...etc)不同,搞不懂真正MMIC的定義....謝謝 ^^"
MMIC stands for microwave monolithic integrated circuits. First,
the IC is monolithic, which means all the components are on the
same substrate. GaAs is just one of the choice. Si substrate is
another one. You can realize CMOS on it, or doping with Ge to
realize SiGe HBT, which has the advantage of BiCMOS.
As for the microwave part, it shows the operating frequency of
the IC is in the microwave range. (0.3~3GHz:RF, 3~30GHz:mw,
even 30~300GHz:mmw) Most CMOS ICs are for baseband use. So they
operate at a quite low frequency compared to CMOS MMIC, which
is the result of advanced scaling down technology.
Use MS line as inductor is because inductors usually consume
a lot of chip space compared to the small size of the actice
device.
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1F：推 elf326:thanks ^^ 04/10 14:44