作者sovereignty (没人能把谁的幸福)
看板Electronics
标题Re: [问题] 有关MMIC
时间Mon Apr 10 06:31:41 2006
※ 引述《elf326 (小小)》之铭言：
: 一般MMIC都是使用GaAS作基板材料,有人知道在Si材料(CMOS)上作MMIC有什麽不同吗
: 因为我看过有人在CMOS上用Metal layer做微带线来实现电感,好像使用CMOS来作MMIC
: 可以操作在更高频段(与一般的CMOS相比的画),感觉除了它使用微带线以外并没有与其
: 他的CMOS电路(ex.PA,LNA...etc)不同,搞不懂真正MMIC的定义....谢谢 ^^"
MMIC stands for microwave monolithic integrated circuits. First,
the IC is monolithic, which means all the components are on the
same substrate. GaAs is just one of the choice. Si substrate is
another one. You can realize CMOS on it, or doping with Ge to
realize SiGe HBT, which has the advantage of BiCMOS.
As for the microwave part, it shows the operating frequency of
the IC is in the microwave range. (0.3~3GHz:RF, 3~30GHz:mw,
even 30~300GHz:mmw) Most CMOS ICs are for baseband use. So they
operate at a quite low frequency compared to CMOS MMIC, which
is the result of advanced scaling down technology.
Use MS line as inductor is because inductors usually consume
a lot of chip space compared to the small size of the actice
device.
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1F：推 elf326:thanks ^^ 04/10 14:44