作者Geigemachen ()
看板Physics
标题Re: [问题] 奈米科技展之主题~谢谢
时间Mon Sep 14 07:20:50 2009
※ 引述《ckyLu (So what.)》之铭言:
: ※ 引述《Geigemachen ()》之铭言:
: : 是的
: : 方向。
: : (100)是对应GaAs晶格三个座标轴的第一个座标轴上,
: : 扫描穿隧电子显微镜的电子往第一个座标轴上打过去
: 这部份有点小误会,一般材料的结构表示上,(100)指的是晶面,方向会用<hkl>
: 意思是Gd2O3是磊晶成长在GaAs的(100)晶面上的
c大说得对,"in epitaxial Gd2O3 on GaAs(100)"的(100)语义必然强调
成长方向是没错的。我原来那样写会让人忽略最重要的成长步骤,
逻辑顺序上照c大按部就班来描述比较好。
Direct Observation of interface structure in epitaxial Gd2O3 on GaAs(100)
by STM
从STM的观测方向来讨论,(100)晶面的法向量<100>也应该是STM观测的截面,
除非有人有办法另外磨出一面却不让晶体脆裂。
http://en.wikipedia.org/wiki/Scanning_tunneling_microscope
文义上强调的的确是成长晶面方向,STM观测方向只是理所当然地依循着晶面方向
而无须强调。
这篇文章的摘要:
The epitaxial growth of a Gd2O3 dielectric film on GaAs(100) has successfully
unpinned the Fermi level, and demonstrated the first GaAs metal-oxide
semiconductor field-effect transistor (MOSFET).The fundamental mechanism
responsible for the striking result mainly occurred at the Gd2O3/GaAs
interface. As motivated by the significance of this discovery, it is
essential to conduct in-depth study to obtain precise structural and
electronic information on these epitaxial films and interfaces. These
epitaxially grown films are crystalline with low number of defects and
interfacial states. Utilizing the capabilities of scanning tunneling microscopy
(STM), we have probed the epitaxial interfacial structure of Gd2O3 in
passivating GaAs. In addition, the local electronic properties with atomic
insight are also determined in our present work.
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※ 编辑: Geigemachen 来自: 118.168.168.124 (09/14 07:32)