作者sovereignty (沒人能把誰的幸福)
看板comm_and_RF
標題Re: [問題] ADS模擬電感的問題
時間Tue Apr 11 23:46:58 2006
※ 引述《elf326 (小小)》之銘言：
: 請問各位大大,我現在用TSMC的ADS Design kit裡的spiral inductor作模擬(非momentum)
: 要如何模擬它的Q factor 跟它的寄生串聯電阻...
: 我曾經試過用S parameter去模擬 再用equation
: L =imag(Z(1,1))/2*pi*freq
: Q = imag(S(1,1))/real(S(1,1))
: 可是跑出來的有效電感值L變成負的值(頻率在1g~8g)
L is what is given by you, so you don't have to extract that by eq.
You can open the rf018.net file and search for keyword: spiral
inductor model, then you can find the parasitic series resistance
there. There are eqs. written into the model.
: Q值也相對的很小(大概在2~3)
That's reasonable because the quality factor of on-chip spiral
inductor without special design is quite low. You can check
published papers for that.
: 我是用RF 0.18um的model 是不是等效電路(是pi model嗎??)跟我的式子不符合
: 拜託各位大大了......謝謝 ^^"
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