※ 引述《askakai (沒記憶就只是空殼)》之銘言： : 不好意思 : 我有一些半導體製程的問題想請教大家: : (1)Why the potential of a glow discharge used in dry etching or sputtering : deposition is positive, relative to ground I think it results from that the plasma in dry etching or sputtering system is negative charged. In this case, you need a positive potential to attract the plasma. The plasma will be accerelated and impact the target. : (2)When etching Si over SiO2 in a CF4 plasma, the problem of obtaining an : adequately high Sfs does not usually exist. Why? I can not figure out what Sfs is in the second question. -- 這是趕流行~ http://www.wretch.cc/blog/lary --

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