※ [本文转录自 SENIORHIGH 看板] 作者: ihliu011 (Guitle) 看板: SENIORHIGH 标题: [心得] 台大机械笔试 时间: Sun Apr 2 21:07:45 2006 好像没人PO耶... 那我来大概写一下...记忆力没有很好所以内容可能和实际有差 还有图的部分很抱歉...请自行想像XD 1.一木块质量m，静摩擦系数μs，动摩擦系数μk，受F之力，以4m/s之速度向上运动。 (1)请画出摩擦力f，并计算它的大小。 (2)是否能用以上资讯求出施力F？若能，请求之，若不能，请写出还需要哪些资讯？ 2.一汽车重W，重量由前後轮平均分担，由前轮驱动，两轮分受F1、F2之摩擦力。请画出 F1及F2并求F1、F2之关系？ (1)汽车静止时。(2)汽车向上坡运动时。 3.A paragraph about Isaac Newton (文章内容略) 中文问题(简答)： (1)文中提到牛顿发现几个物理定律？ (2)文中是否有提到牛顿与他人共同合作发展什麽学问？若有，是哪门学问？ (3)文中提到牛顿在哪些物理领域有贡献？ (4)文中提到哪几位科学家？ (5)文中提到牛顿在哪里受教育？ 4.(1)一不倒翁由两部分组成，上方为一质量为m之圆盘，下方为一质量为p之扇形盘，圆 盘质心距地面Ym，扇形盘质心距地面Yp。请推导出整个不倒翁的质心位置YT？ (2)已知圆盘直径为d，扇形盘半径为R，两 盘由同一材质制成，密度ρ，两盘厚度均为b 。以不倒翁稳定时与地面的接触点为原点(0,0)，建立座标系，请问在此座标系中其质心 的座标YT(x,y)为何？ (3)不倒翁如超越某倾斜角，即会失去平衡而翻倒。利用题(2)的结果，建立最大倾斜角Ψ max、扇形盘半径R与质心位置YT的数学关系(提示：不倒翁与地面之接触点随会倾斜角而 改变)。 5.一储水装置包含A、B两水桶和输水管，若A、B和输水管之容量相同，又CD、DE、EF各段 水管长度均等且截面积相同。若由水由A注入，试绘出A桶进水量与B桶储水量的关系曲线 图(部分数值需考生自行估计)。 6.(1)请简述热气球的飞行原理。 (2)若将一充饱之氢气球(假设不会破)，瞬间移至背对太阳的月球後方，则其形状会有 何种改变？ (3)地球外之某太空舱外，甲乙两太空人使用喷气式推进器静止在太空中，若两人同时 关闭推进器，则 (a)甲看乙，乙如何运动？ (b)由静止太空舱内的观察者看两人如何运动？ (c)若甲知道他与乙之间的距离和自己移动的距离，能否推算出自己的速度？(提示如右 图)。 7.It's well known that the speed of light is C km/hr and the speed of voice is B km/hr. Now an investigator is driving a car which at speed of A km/hr along the highway. He is driving toward a highway gas staion and is X km away from it when the station exploded. (1)How much more distence do he drive until he see the light of the explosion? (2)How much more distence do he drive until he hear the sound of the explosion? (3)How much time do he drive until he reach the station after it's explosion? (4)If C>>B and B>>A,what is the approximate answer in (2)? 8.蜘蛛人从相距20公尺的两大楼中用蜘蛛丝阻止一列沿轨道疾驶的电车，左图是蜘蛛丝弹 力及伸长量之关系图，右图是电车速度与距离之关系图，试估计电车及乘客的总质量并写 出你用以估计的假设条件？ 9.Determine and prove the following sequences converge or diverge? ∞ ∞ (1){（1^49+2^49+3^49+…+n^49）/n^50} (2){（1+2/n）^n} n=1 n=1 ∞ ∞ ∞ (3){e^n/n} (4){sin（n）/n} (5){ln（n）/n} n=1 n=1 n=1 10.Reading comprehension: In 2002 both chipmakers and their suppliers had failed to achieve critical milestones in the development of the world's most sophisticated cameras-the lithography machines that project a circuit image onto a photochemical "resist" covering the silicon wafer, the disk that is later cut up into individual chips. A developing chemical removes, say, the exposed area, and then an etching chemical transfers the pattern into the wafer. The most common method of making circuits smaller is to reduce the wavelength of light with a machine that traces progressively tinier circuit features on a wafer. Lithography toolmakers had bumped up against numerous obstacles in making a machine that radiates wavelengths of 157 nanometers. Going from one lithography generation to another requires adoption of new lasers, masks (the stencillike pattern of circuits through which laser light is projected), lenses that reduce the image size and exposure, and photoresists. For 157 nanometers, equipment companies could not figure out how to fashion lenses from calcium fluoride with few enough defects and optical aberrations to form a clear image on the wafer. "There was a very large problem with the quality of materials and the manufacturing yields," notes George A. Gomba, senior manager of advanced lithography development at IBM Microelectronics. A way forward arrived during the summer of 2002 at a workshop on 157-nanometer lithography sponsored by Sematech, the semiconductor research consortium. At the meeting, Burn Lin, an executive from Taiwan Semiconductor Manufacturing Company, the world's largest contract chip manufacturer, was scheduled to give a speech on immersion lithography, a hand-me-down from Amici's ideas. Lin, who had researched immersion while at IBM during the 1980s, was supposed to describe how immersion might be used for 157 nanometers by exploiting a viscous machine oil. Instead he spent his lecture describing why lithography at that scale would not work-and why the industry should set its sights on applying immersion to a previous generation of already fielded lithographic equipment that employed a wavelength of 193 nanometers. By concentrating on immersion at 193 nanometers, chipmakers could enhance resolution of tried-and-true lithography equipment until it actually bested what 157-nanometer equipment was supposed to achieve. "That sort of caught the attention of all in attendance," Lin says. "And of course they forgave me for saying 157 nanometers was no good." Water, which is transparent to 193-nanometer radiation but not to 157, can enhance resolution because it enables a lithography machine to be built with a higher numerical aperture, a key factor in its ability to resolve fine detail. Water also improves the depth of focus-the distances from the camera at which the image projected onto the photoresist stays acceptably sharp. Depth of focus remains a particular concern in advanced chipmaking because the slightest unevenness on the wafer surface can spoil the image. from Scientific American,July 2005 中文问题（每题可能有一至五个答案）： (1)文中提到的" lithography"可以做什麽？ (a)切割晶圆(b)侵蚀化学阻膜(c)？？？(d)投影电路图到阻膜上(e)制作光罩 (2)当入射光的波长降到157nm以下时会产生什麽问题？ (a)？？？(b)？？？(c)？？？(d)？？？(e)辐射会破坏阻膜 (3)使用水之後会产生什麽影响？ (a)光波之波长变短(b)？？？(c)提升numerical aperture (d)使影像变清晰(e)焦距变深 End --

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※ 发信站: 批踢踢实业坊(ptt.cc) ◆ From: 61.229.173.9 ※ 编辑: ihliu011 来自: 61.224.138.41 (05/08 21:42)