作者paul112004 (Time to say goodbye)
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标题[试题] 99下 顾孟恺 数位电子学 期中考
时间Mon Apr 25 21:08:40 2011
课程名称︰数位电子学
课程性质︰系必修
课程教师︰顾孟恺
开课学院:电机资讯学院
开课系所︰资讯工程学系
考试日期(年月日)︰2011/04/25
考试时限(分钟):140
是否需发放奖励金:是
(如未明确表示,则不予发放)
试题 :
Instructor: Mong-Kai Ku
4/25/2011
Grading: Total 100 points
1.(20%) Use voltage and current division to find V1, V2, I2, I3 in the circuit
in Fig.1 if V = 18V, R1 = 56kΩ, R2 = 33kΩ, and R3 = 11kΩ.
+ V1 -
┌────﹌﹌﹌────●───────┐
│ │ │
│ ↓I2 + ↓I3
┌─┴─┐ │ │
│ + │ │ │
│ │V § §
│ │ R2§ V2 §R3
│ - │ § §
└─┬─┘ │ │
│ │ - │
│ │ │
└───────────●───────┘
Fig. 1
2.(30%) Find the Q-point for the diodes in the curcuit in Fig.2.
(a) Using the ideal diode model
(b) Using the constant voltage drop model with V_on = 0.6V
(c) Explain the difference in (a) and (b).
○
│0V
│
─┴─
╲ ╱
─┬─
-5V │ 4.7KΩ 4.7KΩ │╱│ +12V
○──﹌﹌﹌──●─﹌﹌﹌─●─﹌﹌﹌─┤ ├──○
4.7KΩ │ │╲│
─┴─
╱ ╲
─┬─
│
+5V│
○
Fig.2
3.(25%) A silicon wafer is uniformly doped with 5 * 10^16 phosphorus
atoms/cm^3 and 6 * 10^16 boron atoms/cm^3. Find the eletron and hole
concentrations, the electron and hole mobilities, and the resistivity
of this silicon material at 300K. Is this material n- or p-type?
1270
μ_n = 92 + ───────────
N_T
1 + (──────)^0.91
1.3 * 10^17
447
μ_p = 48 + ───────────
N_T
1 + (──────)^0.76
6.3 * 10^16
(Fig.3 是一张与上二式对应的坐标平面图,省略)
4.(25%) Fig.4 is a single loop circuit containing a 20-V source supplying
current to a Zener diode with a reverse breakdown voltage of 5V. Find the
Q-point for the diode.
(a) Using load-line analysis
(b) Using the piecewise linear model
5KΩ I_Z
┌──────﹌﹌﹌────→────┐
│ │
│ ╭────────╮ │
┌─┴─┐ │ │- │
│ + │ │ │ ┌┴┘
│ │20V │ │V_D ╱ ╲ V_Z = 5V
│ - │ │ │ ─┬─ R_Z = 100Ω
└─┬─┘ │ I_D │+ │
│ ╰────→───╯ ↑I_D
│ │
└──────────────────┘
Fig.4 Curcuit containing a Zener diode with V_Z = 5V and R_Z = 100Ω
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