作者edwardhw (我是大黄)
看板NTU-Exam
标题[试题] 96下 吕良鸿 数位电子学 期中考
时间Thu Apr 17 23:48:16 2008
课程名称︰ 数位电子学
课程性质︰ 大二系必修
课程教师︰ 吕良鸿
开课学院: 电资学院
开课系所︰ 资工系
考试日期(年月日)︰ 96/4/17
考试时限(分钟): 150
是否需发放奖励金: 是
(如未明确表示,则不予发放)
试题 :
1. Derive and answer the following questions.
(a) For the circuit in Fig. 1(a), find the parameters(R_n, R_o, and A_v0) as
the voltage amplifier model.(10%)
(b) If two of such amplifier are cascaded(connected in series) as shown in
Fig. 1(b), find the voltage gain v_o/v_s.(10%)
input R R R output
⊕──┬─^^^^─┐+ ┌─^^^^─┬─^^^^──⊕
< < ╭┴╮ <
R < R < v_1 │┼│Kv_1 < R
< < │─│ <
│ │- ╰┬╯ │
│ │ │ │
≡ ≡ ≡ ≡
Fig. 1(a)
R_S │\ │\
┌──^^^^─┤ ﹥─┤ ﹥──┬──⊕ v_o
╭┴╮ │/ │/ <
v_s│┼│ amp. amp. < R_L
│─│ <
╰┬╯ │
│ │
≡ Fig. 1(b) ≡
2. Assuming μ_n = 1200cm^2/V and μ_p = 500cm^2/V, find the end-to-end
resistance of a connecting bar 10μm long, 3μm wide and 1μm thick.
(n_i = 1.5*10^10/cm^3)
(a) Intrinsic silcon (5%)
(b) n-doped Si with N_D = 10^16/cm^3 (5%)
(c) n-doped Si with N_D = 10^18/cm^3 (5%)
(d) p-doped Si with N_A = 10^18/cm^3 (5%)
3. For a n-channel MOSFET, the parameters are given as: μ_nC_ox = 200μA/V^2,
V_t0 = 1V, 2φ_F = 0.7V, γ = 0.4V^1/2, λ = 0.025V^-1, W = 10μm, L = 1μm
(a) Find the dc current I_D if the MOSFET is biased at V_G = 5V,
V_D = V_S = V_B = 2V. What is the channel resistance r_DS? (5%)
(b) For the condition in (a), what is the required gate voltage to reduce
the r_DS by 50%? (5%)
(c) For V_G = 5V, V_D = 4V and V_S = V_B = 2V, find the dc current I_D. (5%)
(d) For V_G = 5V, V_D = 4V, V_S = 2V and V_B = 0V, find the dc current I_D.
(5%)
4. Plot the transfer characteristics using constant voltage drop model for the
diodes. (Forward voltage = 0.7V)
(a) The circuit on Fig. 4(a) (5%)
(b) The circuit on Fig. 4(b) (5%)
(c) The circuit on Fig. 4(c) (5%)
(d) The circuit on Fig. 4(d) (5%) (break-down voltage are V_Z1 and V_Z2)
R R R
○─^^^^┬─○ ○─^^^^┬───┬─○ ○─^^^^┬─○
+ ╴ + + │ D1 ╴ + + │ +
v_l △ v_o v_l ▽ △ v_o ▽
- │ - -  ̄ D2 │ - v_l  ̄ v_o
○───┴─○ ○───┴───┴─○ │
(a) (b) ┴
5V –
R - │ -
○─^^^^┬─○ ○───┴─○
+ │ + (c)
Z1 ▽
┌─┘
v_l │ v_o (d) Fig.4
┌─┘
Z2 △
- │ -
○───┴─○
5. All the diodes have n = 1, and can ba treated as the constant voltage model
for dc analysis. For v_s = 0.01sin(100t) V, find the overall voltage v_o
(dc and ac) in Fig. 5.
(a) V_BB = 2V (10%)
(b) V_BB = 0V (10%)
5V
┬
<
< 5kΩ
<
│
Fig. 5 ├───⊕ v_o
│
▽ D2
D1  ̄
┌─|>├─┤
│ │
╭┴╮ ▽ D3
v_s│┼│  ̄
│─│ │
╰┬╯ <
┴ < 5kΩ
V_BB – <
│ │
≡ ┴
-5V
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