作者merick (一切都准备好，就会离开)
看板NEMS
标题[问题] Junction depth calculation
时间Fri Oct 18 12:34:44 2013
以下这两题 能请高手帮忙解答?
1. A phosphorus diffusion has a surface concentration of 5×10^18/cm3,
and the background concentration of the p-type wafer is 1×1015/cm3.
The Dt product for the diffusion is 10-8cm2
a. Find the junction depth for a Gaussian distribution
b. Find the junction depth for an erfc profile
Xj我算得是5.84x10^-4(很不确定= =)
2. Boron is implanted with an energy of 60 keV through a 0.25μm
layer of silicon dioxide. The implanted dose is 1×10^14/cm2
a. Find the boron concentration at the silicon-silicon dioxide interface
b. Find the dose in silicon.
c. Determine the junction depth if the background concentration is 3×10^15/cm3
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