目前实验室从以前学长到现在我想已经累积了很多制程的技术！ 及很多器台手册(如NDL、SRC、NSRRC)， 不过目前应该没有一个地方，也没有任何一个人有完整的资料！ 万一有经验的学长一走，我想很多技术又要重头开始！ 而最近应该蛮多学弟都跟着博班及硕二的在学习机器及制程！ 所以我有个想法，也请大家看看，也给个意见。 1.我们博班及硕二会带硕一学制程如(nanowire or nanogap or etc....) 而学弟负责把详细的制作流程及结果详录下来！ 我举个夸张的例子(1nm 的nanowire制备) setp 1 a. New SOI wafer, cut into 1cm*1cm b. RCA clean DI water 5 min H2OSO4:H2O2 3:1 10min DI water 5min HF:H2O 1:100 30s DI water 5min SC1 10 min DI water 5min SC2 10min DI water 5min HF 30s DI water 5min c. Dry oxide 1200 oC 1hr N&K measure(objcetive thickness=3000um , real thickness = 3010 um) d. Photolithography HMDS 5min AZ6200 (step 1:500 rpm, 30s, step 2 : 5000 rpm, 100s) soft back 150oC 5min 乙台+filter (40s) 200mj/cm2 FHD-5 100s DI water 100s Microscopy measure(objctive width = 5 um, real wdith = 10um) e. etch oxide BOE 5min DI water 5min ACE 5min DI water 5min H2SO4:H2O2 3:1 10min DI water 5min f. SPL HF 5min DI water 1min PtIr (-100V, scan speed = 100um/s) KOH (50oC, 1hr) DI water 1min SEM(objective width 1nm, real width = 10nm) ...................................................... 感觉写的很细很烦，但是我觉的对新手会很有帮助， 因为实验会常失败，其实就是常常忘了这些小细节！ 先看看大家意见怎麽样，若大家觉的还不错 我会从带陈宥任及许振庭开始，实施这样的作法， 到时候再跟各位表告成效！ --

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